Process kit with adjustable tuning ring for edge uniformity control

ABSTRACT

Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Indian Provisional Appl. No.201841019829, filed May 28, 2018, which is incorporated herein byreference.

BACKGROUND Field

Embodiments described herein generally relate to a substrate processingapparatus, and more specifically to an improved process kit for asubstrate processing apparatus.

Description of the Related Art

As semiconductor technology nodes advanced with reduced size devicegeometries, substrate edge critical dimension uniformity requirementsbecome more stringent and affect die yields. Commercial plasma reactorsinclude multiple tunable knobs for controlling process uniformity acrossa substrate, such as, for example, temperature, gas flow, RF power, andthe like. Typically, in etch processes, silicon substrates are etchedwhile electrostatically clamped to an electrostatic chuck.

During processing, a substrate resting on a substrate support mayundergo a process that deposits material on the substrate and to remove,or etch, portions of the material from the substrate, often insuccession or in alternating processes. It is typically beneficial tohave uniform deposition and etching rates across the surface of thesubstrate. However, process non-uniformities often exist across thesurface of the substrate and may be significant at the perimeter or edgeof the substrate. These non-uniformities at the perimeter may beattributable to electric field termination affects and are sometimesreferred to as edge effects. During deposition or etching, process kits,as discussed and described herein, are provided to favorably influenceuniformity at the substrate perimeter or edge. A plasma sheath can bendat the substrate edge depending on the edge ring geometry and thereforeions are accelerated perpendicularly to the plasma sheath. The ions canbe focused or deflected at the substrate edge by the bend in the plasmasheath.

Accordingly, there is a continual need for an improved process kit for asubstrate processing apparatus.

SUMMARY

Embodiments described herein generally related to a substrate processingapparatus. More specifically, process kits, processing chambers, andmethods for processing a substrate are provided. In one or moreembodiments, a process kit includes a process kit for a substrateprocessing chamber includes an edge ring, a sliding ring, an adjustabletuning ring, and an actuating mechanism. The edge ring includes a firstring component and a second ring component. The first ring component isinterfaced with the second ring component such that the second ringcomponent is movable relative to the first ring component forming a gaptherebetween. The second ring component having an upper surface and alower surface. The sliding ring is positioned beneath the edge ring. Thesiding ring has an upper surface and a lower surface, and the uppersurface of the sliding ring contacts the lower surface of the secondring component. The adjustable tuning ring is positioned beneath thesliding ring. The adjustable tuning ring has an upper surface and alower surface, and the upper surface of the adjustable tuning ringcontacts the lower surface of the sliding ring. The actuating mechanismis interfaced with the lower surface of the adjustable tuning ring. Theactuating mechanism is configured to actuate the adjustable tuning ringsuch that the gap between the first ring component and the second ringcomponent is varied. In one or more examples, the sliding ring includesa matrix and a coating, the matrix contains one or more electricallyconductive materials (e.g., aluminum) and the coating contains one ormore electrically insulting materials (e.g., silicon carbide).

In other embodiments, a processing chamber can include a substratesupport member configured to support a substrate and the process kitsupported by the substrate support member. The substrate support membercan include a base, a cooling plate supported by the base, and/or anelectrostatic chuck positioned on an upper surface of the cooling plate.

In some embodiments, a method for processing a substrate can includepositioning the substrate on the substrate support member disposed inthe processing chamber having the process kit as described above. Themethod further includes forming a plasma above the substrate andadjusting a height of the second ring component of the edge ring byactuating the adjustable tuning ring interfaced with the component tochange a direction of ions at an edge of the substrate. A gap isdisposed between the lower alignment coupling of the adjustable tuningring and the upper alignment coupling of the second ring. The methodalso includes adjusting the size of the gap by moving the second ringcomponent to vary a capacitive coupling between the adjustable tuningring and the second ring component.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1A depicts a cross-sectional view of a processing chamber,according to one or more embodiments.

FIGS. 1B-1D depict enlarged partial cross-sectional views of a processkit contained in the processing chamber of FIG. 1A, according to one ormore embodiments.

FIGS. 2A-2J depict enlarged partial cross-sectional views of multipleprocess kits containing various edge rings and adjustable tuning ringsthat include alignment couplings, according to one or more embodiments.

FIG. 3 depicts an enlarged partial cross-sectional view of a process kitcontaining an edge ring with an inwardly angled upper surface, accordingto one or more embodiments.

FIGS. 4A-4C depict enlarged partial cross-sectional views of otherprocess kits, containing edge rings with another inwardly angled orbeveled upper surfaces, according to one or more embodiments.

FIG. 5 depicts an enlarged partial cross-sectional view of anotherprocess kit containing an edge ring, a sliding ring, and an adjustabletuning ring, according to one or more embodiments.

FIG. 6 depicts an enlarged partial cross-sectional view of anotherprocess kit containing an electrically insulating support ring disposedbetween an adjustable tuning ring and the actuating mechanism, accordingto one or more embodiments.

FIGS. 7A and 7B depict bottom views of an adjustable tuning ringillustrating placement locations for actuating mechanisms, according toone or more embodiments.

FIG. 8 depicts an enlarged partial cross-sectional view of a process kitcontaining an adjustable tuning ring having slots used to contain theactuating mechanisms, according to one or more embodiments.

FIGS. 9A and 9B depict bottom views of the adjustable tuning ringillustrated in FIG. 8, according to one or more embodiments.

For clarity, identical reference numerals have been used, whereapplicable, to designate identical elements that are common betweenfigures. Additionally, elements of one embodiment may be advantageouslyadapted for utilization in other embodiments described herein.

DETAILED DESCRIPTION

FIG. 1A is a cross-sectional view of a processing chamber 100 having anadjustable tuning ring, according to one embodiment. As shown, theprocessing chamber 100 is an etch chamber suitable for etching asubstrate, such as substrate 150. Examples of processing chambers thatmay be adapted to benefit from the disclosure are Sym3® ProcessingChamber, C3® Processing Chamber, and Mesa™ Processing Chamber,commercially available from Applied Materials, Inc., located in SantaClara, Calif. It is contemplated that other processing chamber,including deposition chambers and those from other manufacturers, may beadapted to benefit from the disclosure.

The processing chamber 100 includes a chamber body 101 and a lid 103disposed thereon that together define an inner volume 130. The chamberbody 101 is typically coupled to an electrical ground 107. A substratesupport member 180 (e.g., substrate support assembly) is disposed withinthe interior volume 130 to support a substrate 150 thereon duringprocessing. The processing chamber 100 also includes an inductivelycoupled plasma apparatus 102 for generating a plasma within theprocessing chamber 100, and a controller 155 adapted to control examplesof the processing chamber 100.

The substrate support member 180 includes one or more electrodes 153coupled to a bias source 119 through a matching network 120 tofacilitate biasing of the substrate 150 during processing. The biassource 119 may illustratively be a source of up to about 1,000 W (butnot limited to about 1,000 W) of RF energy at a frequency of, forexample, approximately 13.56 MHz, although other frequencies and powersmay be provided as desired for particular applications. The bias source119 may be capable of producing either or both of continuous or pulsedpower. In some examples, the bias source 119 may be a DC or pulsed DCsource. In some examples, the bias source 119 may be capable ofproviding multiple frequencies. The one or more electrodes 153 may becoupled to a chucking power source 160 to facilitate chucking of thesubstrate 150 during processing.

The inductively coupled plasma apparatus 102 is disposed above the lid103 and is configured to inductively couple RF power into the processingchamber 100 to generate a plasma within the processing chamber 100. Theinductively coupled plasma apparatus 102 includes first and second coils110, 112, disposed above the lid 103. The relative position, ratio ofdiameters of each coil 110, 112, and/or the number of turns in each coil110, 112 can each be adjusted as desired to control the profile ordensity of the plasma being formed. Each of the first and second coils110, 112 is coupled to an RF power supply 108 through a matching network114 via an RF feed structure 106. The RF power supply 108 mayillustratively be capable of producing up to about 4,000 W (but notlimited to about 4,000 W) at a tunable frequency in a range from 50 kHzto 13.56 MHz, although other frequencies and powers may be utilized asdesired for particular applications. In some examples, a power divider105, such as a dividing capacitor, may be provided between the RF feedstructure 106 and the RF power supply 108 to control the relativequantity of RF power provided to the respective first and second coils.In some examples, the power divider 105 may be incorporated into thematching network 114.

A heater element 113 may be disposed atop the lid 103 to facilitateheating the interior of the processing chamber 100. The heater element113 may be disposed between the lid 103 and the first and second coils110, 112. In some examples, the heater element 113 may include aresistive heating element and may be coupled to a power supply 115, suchas an AC power supply, configured to provide sufficient energy tocontrol the temperature of the heater element 113 within a desiredrange.

During operation, the substrate 150, such as a semiconductor wafer orother substrate suitable for plasma processing, is placed on thesubstrate support member 180 and process gases supplied from a gas panel116 through entry ports 117 into the interior volume 130 of the chamberbody 101. The process gases are ignited into a plasma 118 in theprocessing chamber 100 by applying power from the RF power supply 108 tothe first and second coils 110, 112. In some examples, power from a biassource 119, such as an RF or DC source, may also be provided through amatching network 120 to electrodes 153 within the substrate supportmember 180. The pressure within the interior of the processing chamber100 may be controlled using a valve 121 and a vacuum pump 122. Thetemperature of the chamber body 101 may be controlled usingliquid-containing conduits (not shown) that run through the chamber body101.

The processing chamber 100 may be used for various plasma processes. Inone embodiment, the processing chamber 100 may be used to perform dryetching with one or more etching agents. For example, the processingchamber 100 may be used for ignition of plasma from one or moreprecursors or process gases, such as one or more fluorocarbons (e.g.,CF₄ or C₂F₆), O₂, NF₃, N₂, Ar, He, or combinations thereof.

The processing chamber 100 includes a controller 155 to control theoperation of the processing chamber 100 during processing. Thecontroller 155 can include a central processing unit (CPU) 123, memory124, and support circuits 125 for the CPU 123 and facilitates control ofthe components of the processing chamber 100. The controller 155 may beone of any form of general-purpose computer processor that can be usedin an industrial setting for controlling various chambers andsub-processors. The memory 124 stores software (source or object code)that may be executed or invoked to control the operation of theprocessing chamber 100 in the manner described herein.

To facilitate control of the processing chamber 100, the CPU 123 may beone of any form of general purpose computer processor that can be usedin an industrial setting, such as a programmable logic controller (PLC),for controlling various chambers and sub-processors. The memory 124 iscoupled to the CPU 123 and the memory 124 is non-transitory and may beone or more of readily available memory such as random access memory(RAM), read only memory (ROM), floppy disk drive, hard disk, or anyother form of digital storage, local or remote. Support circuits 125 arecoupled to the CPU 123 for supporting the processor in a conventionalmanner. Charged species generation, heating, and other processes aregenerally stored in the memory 124, typically as software routine. Thesoftware routine may also be stored and/or executed by a second CPU (notshown) that is remotely located from the processing chamber 100 beingcontrolled by the CPU 123.

The memory 124 is in the form of computer-readable storage media thatcontains instructions, that when executed by the CPU 123, facilitatesthe operation of the processing chamber 100. The instructions in thememory 124 are in the form of a program product such as a program thatimplements the method of the present disclosure. The program code mayconform to any one of a number of different programming languages. Inone example, the disclosure may be implemented as a program productstored on a computer-readable storage media for use with a computersystem. The program(s) of the program product define functions of theembodiments (including the methods described herein). Illustrativecomputer-readable storage media include, but are not limited to: (i)non-writable storage media (e.g., read-only memory devices within acomputer such as CD-ROM disks readable by a CD-ROM drive, flash memory,ROM chips, or any type of solid-state non-volatile semiconductor memory)on which information is permanently stored; and (ii) writable storagemedia (e.g., floppy disks within a diskette drive or hard-disk drive orany type of solid-state random-access semiconductor memory) on whichalterable information is stored. Such computer-readable storage media,when carrying computer-readable instructions that direct the functionsof the methods described herein, are embodiments of the presentdisclosure.

The processing chamber 100 also includes a process kit 200 disposed inthe interior volume 130, such as on the substrate support member 180, asdepicted in FIG. 1A. Various embodiments of the process kit 200 andother process kits are described below. The process kit 200 is usedduring the processing operation of the substrate 150, such as during aplasma process. FIGS. 1B and 1C depict enlarged partial cross-sectionalviews of the process kit 200 including the substrate support member 180in the processing chamber 100.

The substrate support member 180 includes an electrostatic chuck (ESC)202, a cooling plate (or cathode) 204, a base 206, and a cathode stack212. The cooling plate 204 is disposed on the base 206. The coolingplate 204 may include a plurality of cooling channels (not shown) forcirculating coolant therethrough. The cooling plate 204 may be engagedwith or bonded to the electrostatic chuck 202 by an adhesive or othersuitable mechanism. One or more power supplies 208 may be coupled to thecooling plate 204. The power supplies can be or include sources and/orfeeds for radio frequency (RF), alternating current (AC), and/or directcurrent (DC). The electrostatic chuck 202 may include one or moreheaters (not shown). The one or more heaters may independently becontrollable. The one or more heaters enable the electrostatic chuck 202to heat the substrate 150 to a desired temperature.

The process kit 200 includes an edge ring 210 containing a first ringcomponent 220 and a second ring component 230 forming an annular body.The first ring component 220 and the second ring component 230 canindependently be made from or include one or more electrically insultingmaterials, such as silicon carbide, silicon oxide, quartz, or anycombination thereof. The two ring components 220, 230 are interfacedwith each other such that the second ring component 230 is movablerelative to the first ring component 220.

As shown in FIG. 1C, the first ring component 220 includes an uppersurface 218, a lower surface 219, an inner edge 222, and an outer edge224. The upper surface 218 is substantially parallel to the lowersurface 219. The inner edge 222 is substantially parallel to the outeredge 224, and substantially perpendicular to the lower surface 219. Thefirst ring component 220 further includes a stepped surface 226 definedtherein. In the embodiment shown, the stepped surface 226 is formed inthe outer edge 224, such that the stepped surface 226 is substantiallyparallel to the lower surface 219. The stepped surface 226 defines arecess for receiving the second ring component 230. Generally, theheight of the first ring component 220 is limited by the height of theelectrostatic chuck 202. For example, the inner edge 222 of the firstring component 220 does not extend above the height of the electrostaticchuck 202. As such, the first ring component 220 protects a side of theelectrostatic chuck 202. In some embodiments, the substrate 150, whenpositioned on the electrostatic chuck 202, extends partially over thefirst ring component 220, such as above the upper surface 218.

The second ring component 230 includes an upper surface 228, a lowersurface 231, an inner edge 232, and an outer edge 234. The upper surface228 is substantially parallel to the lower surface 231. The inner edge232 is substantially parallel to the outer edge 234 and substantiallyperpendicular to the lower surface 231. In one embodiment, the secondring component 230 is interfaced with the first ring component 220 viathe lower surface 231. For example, the stepped surface 226 of the firstring component 220 interfaces with at least a portion of the lowersurface 231 of the second ring component 230. When interfaced with thefirst ring component 220, the inner edge 232 of the second ringcomponent 230 is spaced from the substrate 150. For example, the inneredge 232 of the second ring component 230 may be spaced between about0.02 mm and about 0.1 mm from the substrate 150.

In other embodiments, when interfaced, the first ring component 220 andthe second ring component 230 form a continuous lower surface and acontinuous upper surface, as depicted in FIG. 1C. In another embodiment,when not interfaced, the first ring component 220 and the second ringcomponent 230 do not form a continuous lower surface or a continuousupper surface, as depicted in FIG. 1D. Rather, in some embodiments, theupper surface 218 of the first ring component 220 may be higher than theupper surface 228 of the second ring component 230. In otherembodiments, the lower surface 231 of the second ring component 230 maysit below the lower surface 219 of the first ring component 220. Thus,in some embodiments, the first ring component 220 and the second ringcomponent 230 do not form a continuous top or lower surface.

The process kit 200 further includes an adjustable tuning ring 250having an upper surface 254 and a lower surface 256. The adjustabletuning ring 250 may be formed from or otherwise include one or moreelectrically conductive materials. For example, the electricallyconductive material can be or include aluminum or one or more aluminumalloys. The adjustable tuning ring 250 is disposed beneath the edge ring210. For example, the adjustable tuning ring 250 is disposed beneath thesecond ring component 230. The adjustable tuning ring 250 contacts thelower surface of the 231 of the second ring component 230. In oneembodiment, the adjustable tuning ring 250 extends down the length ofthe electrostatic chuck 202 and the cooling plate 204, such that theadjustable tuning ring 250 has a height substantially equal to thecombined heights of the electrostatic chuck 202 and the cooling plate204. As such, the adjustable tuning ring 250 is able to couple powerfrom the cooling plate 204 to the edge ring 210.

The adjustable tuning ring 250 may circumscribe the cooling plate 204,thus forming a laterally spaced gap 258 therebetween. In one example,the laterally spaced gap 258 has a width of greater than 0 inches andless than or equal to 0.03 inches. In other examples, the laterallyspaced gap 258 was a width of about 0.005 inches, about 0.007 inches, orabout 0.009 inches to about 0.0010 inches, about 0.0013 inches, about0.0015 inches, or about 0.0019 inches. For example, the laterally spacedgap 258 has a width of about 0.007 inches to about 0.0015 inches. Theadjustable tuning ring 250 interfaces with a lift pin 260. For example,the lift pin 260 may be operably coupled with the adjustable tuning ring250.

In one or more embodiments, the plasma sheath 201 at the edge of thesubstrate 150 can be adjusted by tuning the power coupled to the secondring component 230 by the adjustable tuning ring 250 disposed below thesecond ring component 230 and beside the cooling plate 204 at thelaterally spaced gap 258 and further RF power is delivered to adjustabletuning ring 250 by forming capacitive coupling with cooling plate 204.

The lift pin 260 is driven by a lift or actuating mechanism 280. Theactuating mechanism 280 can include one or more lift mechanisms 282, oneor more sealed bellows 284, one or more actuators, one or morecontrollers, and other components. The lift mechanism 282 can be orinclude one or more servo drives, servo motors, electric motors, gears,or combinations thereof. In one or more configurations, the actuatingmechanism 280 includes servo drives and actuator assemblies mounted onthe outside or atmospheric side of the processing chamber 100 andconnected to the actuators or lift mechanisms 282 using bellows to sealvacuum within the interior volume 130.

In one or more embodiments, the actuating mechanism 280 includes two,three, four, or more lift pins 260, each of the lift pins 260 having afirst end and a second end, the first end of the lift pin 260 contactingthe lower surface 256 of the adjustable tuning ring 250, and the secondend of the lift pin 260 in communication with a lift mechanism 282. Theactuating mechanism 280 allows the adjustable tuning ring 250 to bemoved vertically within the processing chamber 100. As a result of thevertical movement of the tuning ring 250, the actuating mechanism 280raises, lowers, or otherwise moves the second ring component 230.

As depicted in FIG. 1D, the second ring component 230 may be raisedabove the first ring component 220, thus forming a gap 237 between thestepped surface 226 of the first ring component 220 and the lowersurface 231 of the second ring component 230. The gap 237 can be fromabout 0 mm, about 1 mm, about 2 mm, or about 3 mm to about 5 mm, about 7mm, about 10 mm, or about 12 mm. The actuating mechanism 280 interfacedwith the lower surface 256 of the adjustable tuning ring 250, theactuating mechanism 280 configured to actuate the adjustable tuning ring250 such that the gap 237 between the first ring component 220 and thesecond ring component 230 is varied.

In one embodiment, the adjustable tuning ring 250 may include a coatingformed or otherwise disposed on the upper surface 254 of the adjustabletuning ring 250. For example, the coating may be or include an yttriaoxide coating or a gel-like coating. The coating is used to limit thechemical reaction between the plasma and the adjustable tuning ring 250and thus limits particle creation and ring damage. In anotherembodiment, one or more dielectric pads (e.g., pads containingpolytetrafluoroethylene) are positioned in between the edge ring 210 andthe electrostatic chuck 202.

The process kit 200 also includes a cover ring assembly 270, an annularbody 276, and a plasma screen 278 disposed therebetween. The cover ringassembly 270 has an annular shape and includes a cover ring 272 and asleeve 274. The cover ring 272 and the sleeve 274 can independently bemade from or include quartz material or other plasma resistant material.For example, the cover ring 272 can be a quartz ring and the sleeve 274can be a quartz pipe.

In one or more embodiments, as depicted in FIGS. 1C and 1D, a plasmasheath 201 is formed over portions of the substrate 150 and the edgering 210 within the process kit 200 in the processing chamber 100. Thevoltage, V_(DC), can be used to control the plasma sheath 201 profile atthe edge of the substrate 150 to compensate for critical dimensionuniformity at the edge of the substrate 150. The plasma sheath 201 is athin region of strong electric fields formed by space charge that joinsthe body of the plasma to its material boundary. Mathematically, thesheath thickness, d, is represented by the Child-Langmuir equation:

${d = {\frac{2}{3}\left( \frac{ɛ}{i} \right)^{\frac{1}{2}}\left( \frac{2e}{m} \right)^{\frac{1}{4}}\left( {V_{p} - V_{DC}} \right)^{\frac{3}{4}}}},$

where i is the ion current density, ε is the permittivity of vacuum, eis the elementary electric charge, V_(p) is the plasma potential, andV_(DC) is the DC voltage.

In the case of an etch reactor, a plasma sheath 201 is formed betweenthe plasma and the substrate 150 being etched, the chamber body 101, andevery other part of the process kit 200 and the processing chamber 100in contact with the plasma. The ions produced in a plasma areaccelerated in the plasma sheath and move perpendicular to the plasmasheath. Controlling the V_(DC), i.e., controlling the voltage applied tothe edge ring 210, affects the thickness, d, of the plasma sheath 201.The sheath thickness, d, of the plasma sheath 201 may be measured withrespect to the edge ring 210. For example, the thickness, d, is depictedin FIGS. 1C and 1D. In the embodiment shown, actuating the adjustabletuning ring 250 raises second ring component 230. Because V_(DC) remainsconstant, the sheath thickness above the edge ring 210 remains constant.Therefore actuating the adjustable tuning ring 250 vertically raises theplasma sheath 201 without impacting the sheath thickness. Thus, movingthe adjustable tuning ring 250 affects the shape of the plasma sheath201 at the edge of the substrate 150, which in turn controls thedirection of plasma ions.

FIG. 1D illustrates the portion of the process kit 200 in the processingchamber 100 of FIG. 1C, with the second ring component 230 in the raisedposition. As illustrated, and as discussed in FIG. 1C, raising theadjustable tuning ring 250 raises the second ring component 230, whichin turn raises the plasma sheath 201. Because the potential, V_(DC),remains nearly constant as a result of a nearly fixed capacitance, theplasma sheath 201 thickness, d, remains constant throughout.

FIGS. 2A-2J depict enlarged partial cross-sectional views of processkits 200 a-200 j which include alignment couplings disposed between theinterface of the edge ring 210 and adjustable tuning ring 250, accordingto one or more embodiments. Each of the process kits 200 a-200 j can beused in the processing chamber 100 by replacing the process kit 200,completely or in part, with any of the process kits 200 a-200 j.

Each of the process kits 200 a-200 j includes the edge ring 210 havingthe first ring component 220 and the second ring component 230. Thefirst ring component 220 can be interfaced with the second ringcomponent 230 such that the second ring component 230 is movablerelative to the first ring component 220 in order to form the gap 237therebetween (as depicted in FIG. 1D). For example, the gap 237 can beformed between the stepped 226 of the first ring component 220 and thelower surface 231 of the second ring component 230. The upper surface254 of the adjustable tuning ring 250 and the lower surface 231 of thesecond ring component 230 can engage or otherwise contact each other.

The lower surface 231 of the second ring component 230 includes an upperalignment coupling 236 and the upper surface 254 of the adjustabletuning ring 250 includes a lower alignment coupling 252. The loweralignment coupling 252 of the adjustable tuning ring 250 can mate withthe upper alignment coupling 236 of the second ring component 230 toform an interface having a reciprocal or mating profile.

The upper alignment coupling 236 can be a male or female coupling andthe lower alignment coupling 252 is the opposite type of coupling as theupper alignment coupling 236. For example, if the upper alignmentcoupling 236 is a male coupling, then the lower alignment coupling 252is a female coupling. Alternatively, if the upper alignment coupling 236is the female coupling, then the lower alignment coupling 252 is themale coupling. The reciprocal or mating profile formed between the upperalignment coupling 236 and the lower alignment coupling 252 can have ageometry of a dovetail, a spline, finned, triangular, rectangular,square, trapezoidal, arced, rounded, combinations of such geometries, aswell as other geometries.

In the process kit 200 a, as depicted FIG. 2A, the upper alignmentcoupling 236 is a male coupling with dovetail or trapezoidal geometryextending from the lower surface 231 of the second ring component 230.The lower alignment coupling 252 is a female coupling with dovetail ortrapezoidal geometry formed into the upper surface 254 of the adjustabletuning ring 250.

In the process kit 200 b, as depicted FIG. 2B, the upper alignmentcoupling 236 is a female coupling with dovetail or trapezoidal geometryformed into the lower surface 231 of the second ring component 230. Thelower alignment coupling 252 is a male coupling with dovetail ortrapezoidal geometry extending from the upper surface 254 of theadjustable tuning ring 250.

In the process kit 200 c, as depicted FIG. 2C, the upper alignmentcoupling 236 is a male coupling with the triangular geometry extendingfrom the lower surface 231 of the second ring component 230. The loweralignment coupling 252 is a female coupling with triangular geometryformed into the upper surface 254 of the adjustable tuning ring 250.

In the process kit 200 d, as depicted FIG. 2D, the upper alignmentcoupling 236 is a female coupling with triangular geometry formed intothe lower surface 231 of the second ring component 230. The loweralignment coupling 252 is a male coupling with triangular geometryextending from the upper surface 254 of the adjustable tuning ring 250.

In the process kit 200 e, as depicted FIG. 2E, the upper alignmentcoupling 236 is a male coupling with square or rectangular geometryextending from the lower surface 231 of the second ring component 230.The lower alignment coupling 252 is a female coupling with square orrectangular geometry formed into the upper surface 254 of the adjustabletuning ring 250.

In the process kit 200 f, as depicted FIG. 2F, the upper alignmentcoupling 236 is a female coupling with square or rectangular geometryformed into the lower surface 231 of the second ring component 230. Thelower alignment coupling 252 is a male coupling with square orrectangular geometry extending from the upper surface 254 of theadjustable tuning ring 250.

In the process kit 200 g, as depicted FIG. 2G, the upper alignmentcoupling 236 is a male coupling with arced or rounded geometry extendingfrom the lower surface 231 of the second ring component 230. The loweralignment coupling 252 is a female coupling with arced or roundedgeometry formed into the upper surface 254 of the adjustable tuning ring250.

In the process kit 200 h, as depicted FIG. 2H, the upper alignmentcoupling 236 is a female coupling with arced or rounded geometry formedinto the lower surface 231 of the second ring component 230. The loweralignment coupling 252 is a male coupling with arced or rounded geometryextending from the upper surface 254 of the adjustable tuning ring 250.

In the process kit 200 i, as depicted FIG. 2I, the upper alignmentcoupling 236 is a male coupling with finned geometry extending from thelower surface 231 of the second ring component 230. The lower alignmentcoupling 252 is a female coupling with finned geometry formed into theupper surface 254 of the adjustable tuning ring 250.

In the process kit 200 j, as depicted FIG. 2J, the upper alignmentcoupling 236 is a female coupling with finned geometry formed into thelower surface 231 of the second ring component 230. The lower alignmentcoupling 252 is a male coupling with finned geometry extending from theupper surface 254 of the adjustable tuning ring 250.

The finned geometries can have two, three, or more shaped profiles, thesame or different geometries, as male couplings and/or female couplings.The finned geometries can be of any coupling shown in FIGS. 2A-2J, aswell as other geometric shapes. For example, the finned geometry caninclude two rectangular geometries (as shown in FIGS. 2I and 2J).Alternatively, the finned geometry can include two triangulargeometries, a combination of a rectangular geometry and a triangulargeometry, a combination of a rectangular geometry and a dovetailgeometry, or any other combination.

A gap 253, as depicted in FIGS. 2A-2J, can be disposed between the uppersurface 254 of the adjustable tuning ring 250 and the lower surface 231of the second ring component 230. More specifically, the gap 253 isdisposed between the lower alignment coupling 252 of the adjustabletuning ring 250 and the upper alignment coupling 236 of the second ring.The adjustable tuning ring 250 is actuated, adjusted, or otherwise movedto adjust the size of the gap 253 and vary a capacitive coupling betweenthe adjustable tuning ring 250 and the second ring component 230.Therefore, by varying the distance between the adjustable tuning ring250 and the second ring component 230 (e.g., size of gap 253), thecapacitive coupling therebetween is proportionally varied.

In one or more embodiments, two distinct regimes are possible for tuningthe plasma sheath 201. In one example, the size of the gap 253 may bevariably maintained or adjusted between the adjustable tuning ring 250and the second ring component 230. In another example, the adjustabletuning ring 250 and the second ring component 230 are touching or incontact with one another and therefore the gap 253 therebetween does notexist.

FIG. 3 depicts an enlarged partial cross-sectional view of a process kit300 containing the edge ring 210 with an inwardly angled upper surface228, according to one or more embodiments. FIG. 4A depicts an enlargedpartial cross-sectional view of a process kit 400 a containing the edgering 210 with an inwardly beveled upper surface 228, according to one ormore embodiments. FIGS. 4B and 4C depict enlarged partialcross-sectional views of process kits 400 b, 400 c, respectively,containing the edge ring 210 with inwardly beveled upper surfaces 228.For the process kits 300 and 400 a-400 c, the first ring component 220is interfaced with the second ring component 230 such that the secondring component 230 is movable relative to the first ring component 220forming the gap 253 therebetween. Any of the process kits 300 and 400a-400 c can be used in the processing chamber 100 by replacing theprocess kit 200 or any of the process kits 200 a-200 j, completely or inpart, with any of the process kits 300 or 400 a-400 c.

In one or more embodiments, at least a portion of the upper surface 228of the second ring component 230 is inwardly angled towards the firstring component 220. In one embodiment, the upper surface 228 of thesecond ring component 230 is inwardly angled from the outer edge 234 tothe inner edge 232, as depicted in FIG. 3. In another embodiment, asdepicted in FIG. 4A, a portion or segment of the upper surface 228 ofthe second ring component 230 is inwardly angled away from the outeredge 234 and towards the inner edge 232. The upper surface 228 of thesecond ring component 230 can have a beveled upper surface 229 bdisposed between an inner upper surface 229 a and an outer upper surface229 c. The beveled upper surface 229 b is inwardly angled towards theinner edge 232, such as towards the first ring component 220 and/or thesubstrate 150. The inner upper surface 229 a and the outer upper surface229 c can be parallel or substantially parallel to one another, asdepicted in FIG. 4A. Alternatively, the inner upper surface 229 a andthe outer upper surface 229 c are not parallel to one another (notshown).

In another embodiment, as depicted in FIG. 4B, a portion or segment ofthe upper surface 228 of the second ring component 230 is inwardlyangled away from the outer edge 234 and towards the inner edge 232. Theupper surface 228 of the second ring component 230 can have the inwardlyangled or beveled upper surface 229 b disposed adjacent to the outerupper surface 229 c. In another embodiment, as depicted in FIG. 4C, twoor more portions or segments of the upper surface 228 of the second ringcomponent 230 are inwardly angled from the outer edge 234 to the inneredge 232. The upper surface 228 of the second ring component 230 canhave the inner upper surface 229 a, next to a first inwardly angled orbeveled upper surface 229 b, next to a first outer upper surface 229 c,next to a second inwardly angled or beveled upper surface 229 b, next toa second outer upper surface 229 c. The beveled upper surfaces 229 b, asshown in FIGS. 2B and 2C, are inwardly angled towards the inner edge232, such as towards the first ring component 220 and/or the substrate150.

During processing, the inwardly angled upper surface 228 (FIG. 3) andthe inner upper surfaces 229 a (FIGS. 4A-4C) funnel or otherwise directplasma towards the inner edge 232 of the second ring component 230, theupper surface 218 of the first ring component 220, and the substrate150. As such, the inwardly angled upper surface 228 (FIG. 3) and theinner upper surfaces 229 a (FIGS. 4A-4C) direct plasma away from theouter edge 224 of the second ring component 230 and the cover ring 272.

The second ring component 230 has an inner thickness D1 and an outerthickness D2, as measured between the upper surface 228 and the lowersurface 231. For the second ring component 230 depicted in FIGS. 4A-4C,the inner thickness D1 is measured between the inner upper surface 229 aand the lower surface 231, and the outer thickness D2 is measuredbetween the outer upper surface 229 c and the lower surface 231. Theinner thickness D1 is less than the outer thickness D2, as shown inFIGS. 3 and 4A-4C. The inner thickness D1 of the second ring component230 is about 1 mm, about 1.8 mm, about 2 mm, or about 2.5 mm to about 3mm, about 4 mm, about 5 mm, or about 6 mm. The outer thickness D2 of thesecond ring component 230 is about 1 mm, about 2 mm, or about 3 mm toabout 5 mm, about 7 mm, about 10 mm, about 12 mm, or about 15 mm.

FIG. 5 depicts an enlarged partial cross-sectional view of a process kit500 containing the edge ring 210, a sliding ring 520, and the adjustabletuning ring 250, according to one or more embodiments. The sliding ring520 is positioned beneath the edge ring 210. The siding ring 520 has anupper surface 512 and a lower surface 514. The upper surface 512 of thesliding ring 520 is in contact with the lower surface 231 of the secondring component 230. The adjustable tuning ring 250 is positioned beneaththe sliding ring 520. The upper surface 254 of the adjustable tuningring 250 is in contact with the lower surface 514 of the sliding ring520.

In one or more embodiments, in absence of the sliding ring 520, theplasma can erode portions of the adjustable tuning ring 250 duringprocessing. Once placed between the second ring component 230 and theadjustable tuning ring 250, the sliding ring 520 reduces the amountparticulate formed (from plasma erosion) and collected between thesecond ring component 230 and the adjustable tuning ring 250 as opposedto not including the sliding ring 520 and contacting the second ringcomponent 230 directly with the adjustable tuning ring 250.

The first ring component 220 of the edge ring 210 is interfaced with thesecond ring component 230 of the edge ring 210 such that the second ringcomponent 230 is movable relative to the first ring component 220forming a gap (not shown in FIG. 5) therebetween. The actuatingmechanism 280 is interfaced with the lower surface 256 of the adjustabletuning ring 250. The actuating mechanism 280 moves or actuates theadjustable tuning ring 250 and the sliding ring 520 such that the gap253 between the upper surface 512 of the sliding ring 520 and the lowersurface 231 of the second ring component 230 is varied. Similarly, theactuating mechanism 280 moves or actuates the adjustable tuning ring 250and the sliding ring 520 in contact with the second ring component 230the size of the gap between the second ring component 230 is varied.

In one or more embodiments, the sliding ring 520 can include a body or amatrix that is made from or contains aluminum or an aluminum alloy. Thebody or matrix of the sliding ring 520 can be completely or partiallycoated with a plasma resistant coating or film that contains anodizedoxide (e.g., aluminum oxide layer formed by any anodizing process),yttrium oxide, hafnium oxide, silicon carbide, oxides thereof, or anycombination thereof. In other embodiments, the sliding ring 520 caninclude two or more segments or portions of varying materials, such as asplit structure containing two or more rings. For example, the slidingring 520 can include an upper segment that contains a ring made from orcontaining one or more plasma resistant materials (e.g., siliconcarbide) and a lower segment that contains a ring made from orcontaining one or more electrically conductive materials (e.g., aluminumor an aluminum alloy). The lower segment of the sliding ring 520provides RF coupling with the electrostatic chuck 202. The two or moresegments forming the sliding ring 520 can be bonded together or heldtogether by gravity. In one or more examples, the upper segment (e.g.,silicon carbide) and the lower segment (e.g., aluminum or an aluminumalloy) of the sliding ring 520 can be bonded or otherwise joinedtogether by diffusion aluminum bonding to form the sliding ring 520 thatcan be RF coupled with the cooling plate 204.

FIG. 6 depicts an enlarged partial cross-sectional view of a process kit600 containing an electrically insulating support ring 620 disposedbetween the adjustable tuning ring 250 and the actuating mechanism 280,according to one or more embodiments. Each actuating mechanisms 280includes the lift pin 260. For example, the insulating support ring 620is positioned or otherwise disposed between and contacting theadjustable tuning ring 250 and the lift pin 260. Once placed between theadjustable tuning ring 250 and the actuating mechanism 280, theinsulating support ring 620 reduces the amount particulate formed andcollected between the adjustable tuning ring 250 and the actuatingmechanism 280 relative to if the insulating support ring 620 was notused and instead, the lift pin 260 was directly contacting or connectingwith the adjustable tuning ring 250.

The insulating support ring 620 has an upper surface 622 and a lowersurface 624. In one or more embodiments, as shown in FIG. 6, each of theupper surface 622 and the lower surface 624 independently includes oneor more alignment couplings 632 and 634. The alignment coupling 632 is amale coupling disposed on the upper surface 622 and the alignmentcoupling 634 is a female coupling disposed on the lower surface 624.Alternatively, not shown, the alignment coupling 632 can be a femalecoupling and the alignment coupling 634 can be a male coupling. Asdepicted on FIG. 6, an alignment coupling 257 (female coupling shown) ison the lower surface 256 of the adjustable tuning ring 250 and thealignment coupling 632 is disposed on the upper surface 622 of theinsulating support ring 620 mate to form a reciprocal or mating profiletherebetween. In another embodiment, not shown, neither the adjustabletuning ring 250 nor the insulating support ring 620 have an alignmentcoupling and the upper surface 622 of the insulating support ring 620 ison contact with the lower surface 256 of the adjustable tuning ring 250.

In another embodiment, the alignment coupling 634 can be or include one,two, three, four, or more female couplings, such as slots or holes,formed within the lower surface 624 of the insulating support ring 620.The female alignment couplings 634 can mate with a lift pin 260.Therefore, in some examples, there is the same number of femalealignment couplings 634 as is the number of lift pins 260. In one ormore examples, the insulating support ring 620 has two, three, four, ormore alignment couplings 634 that are slots extending from the lowersurface 624 of the insulating support ring 620 towards the upper surface622 of the insulating support ring 620, and each slot contains a liftpin 260 disposed therein. In another embodiment, not shown, theinsulating support ring 620 does not have an alignment coupling so thatthe lift pin 260 makes contact directly to the lower surface 624 of theinsulating support ring 620 when lifting and lowering the insulatingsupport ring 620 and the adjustable tuning ring 250.

The insulating support ring 620 contains one or more polymeric materialswhich can be or include one or more fluorinated carbons, fluorinatedhydrocarbons, thermoset cross linked polystyrene copolymers (e.g., aREXOLITE® polymer), ceramics, or any combination thereof. In one or moreexamples, the insulating support ring 620 contains apolytetrafluoroethylene (PTFE) material.

Although FIG. 6 depicts an upper alignment coupling that is a malecoupling on the lower surface 231 of the second ring component 230 and alower alignment coupling that is a female coupling on the upper surface254 of the adjustable tuning ring 250, each of the lower surface 231 andthe upper surface 254 can independently have any type of male or femalecoupling (as illustrated in FIGS. 2A-2J), as well as, an absence of acoupling (as illustrated in FIGS. 1C and 1D), such that the lowersurface 231 of the second ring component 230 and the upper surface 254of the adjustable tuning ring 250 make contact to each without acoupling.

FIGS. 7A and 7B depict bottom views of the adjustable tuning ring 250illustrating placement locations for actuating mechanisms 280, accordingto one or more embodiments. FIG. 7A depicts three positions 702 disposedon the lower surface 256 of the adjustable tuning ring 250. In oneexample, these positions 702 are at the locations where the upper endsof the actuating mechanisms 280, such as the lift pins 260, make contactto the lower surface 256. The three positions 702 are separated fromeach other by an angle α1 of about 110 degrees to about 130 degrees,about 115 degrees to about 125 degrees, or about 118 degrees to about122 degrees, for example, about 120 degrees, as measured from the centerof the adjustable tuning ring 250.

FIG. 7B depicts four positions 702 disposed on the lower surface 256 ofthe adjustable tuning ring 250. In another example, each of thesepositions 702 is at the location where the upper end of the actuatingmechanisms 280, such as the lift pin 260, makes contact to the lowersurface 256. The four positions 702 are separated from each other by anangle α2 of about 80 degrees to about 100 degrees, about 85 degrees toabout 95 degrees, or about 88 degrees to about 92 degrees, for example,about 90 degrees, as measured from the center of the adjustable tuningring 250.

FIG. 8 depicts an enlarged partial cross-sectional view of a process kit800 containing the adjustable tuning ring 250 having alignment couplings259 that are used to contain at least a portion of the actuatingmechanisms 280, according to one or more embodiments. The alignmentcouplings 259 can be or include one, two, three, four, or more femalecouplings, such as slots or holes, formed within the lower surface 256of the adjustable tuning ring 250.

The female alignment couplings 259 can mate with a lift pin 260, asshown in FIG. 8. Therefore, in some examples, there is the same numberof female alignment couplings 259 as is the number of lift pins 260. Inone or more examples, adjustable tuning ring 250 has two, three, four,or more alignment couplings 259 that are slots extending from the lowersurface 256 of the adjustable tuning ring 250 towards the upper surface254 of the adjustable tuning ring 250, and each slot contains a lift pin260 disposed therein. The alignment couplings 259 can extend from thelower surface 256 a distance D3 into the adjustable tuning ring 250. Forexample, the distance D3 can be about 1 mm, about 2 mm, about 3 mm, orabout 4 mm to about 5 mm, about 7 mm, about 10 mm, about 12 mm, or about15 mm.

Although FIG. 8 depicts an upper alignment coupling that is a femalecoupling on the lower surface 231 of the second ring component 230 and alower alignment coupling that is a male coupling on the upper surface254 of the adjustable tuning ring 250, each of the lower surface 231 andthe upper surface 254 can independently have any type of male or femalecoupling (as illustrated in FIGS. 2A-2J), as well as, an absence of acoupling (as illustrated in FIGS. 1C and 1D), such that the lowersurface 231 of the second ring component 230 and the upper surface 254of the adjustable tuning ring 250 make contact to each without acoupling.

FIGS. 9A and 9B depict bottom views of the adjustable tuning ring 250illustrated in FIG. 8, according to one or more embodiments. FIG. 9Adepicts three of the slots or female alignment couplings 259 formed inthe adjustable tuning ring 250 and containing points 902 therein. In oneexample, these points 902 are at the locations where the actuatingmechanisms 280, such as the lift pins 260, are inserted or otherwisedisposed into the female alignment couplings 259. The three slots orfemale alignment couplings 259 are separated from each other by an angleα3 of about 110 degrees to about 130 degrees, about 115 degrees to about125 degrees, or about 118 degrees to about 122 degrees, for example,about 120 degrees, as measured from the center of the adjustable tuningring 250.

FIG. 9B depicts four of the slots or female alignment couplings 259formed in the adjustable tuning ring 250 and containing points 902therein. In another example, these points 902 are at the locations wherethe actuating mechanisms 280, such as the lift pins 260, are inserted orotherwise disposed into the female alignment couplings 259. The fourslots or female alignment couplings 259 are separated from each other byan angle α4 of about 80 degrees to about 100 degrees, about 85 degreesto about 95 degrees, or about 88 degrees to about 92 degrees, forexample, about 90 degrees, as measured from the center of the adjustabletuning ring 250.

Embodiments of the present disclosure further relate to any one or moreof the following paragraphs:

1. A process kit for a substrate processing chamber, comprising: an edgering having a first ring component and a second ring component, thefirst ring component interfaced with the second ring component such thatthe second ring component is movable relative to the first ringcomponent forming a gap therebetween, and the second ring componenthaving an upper surface and a lower surface; a sliding ring positionedbeneath the edge ring, the siding ring having an upper surface and alower surface, and the upper surface of the sliding ring contacting thelower surface of the second ring component; an adjustable tuning ringpositioned beneath the sliding ring, the adjustable tuning ring havingan upper surface and a lower surface, and the upper surface of theadjustable tuning ring contacting the lower surface of the sliding ring;and an actuating mechanism interfaced with the lower surface of theadjustable tuning ring, the actuating mechanism configured to actuatethe adjustable tuning ring such that the gap between the first ringcomponent and the second ring component is varied.

2. A processing chamber, comprising: a substrate support memberconfigured to support a substrate; and a process kit supported by thesubstrate support member, the process kit comprising: an edge ringhaving a first ring component and a second ring component, the firstring component interfaced with the second ring component such that thesecond ring component is movable relative to the first ring componentforming a gap therebetween, and the second ring component having anupper surface and a lower surface; a sliding ring positioned beneath theedge ring, the siding ring having an upper surface and a lower surface,and the upper surface of the sliding ring contacting the lower surfaceof the second ring component; an adjustable tuning ring positionedbeneath the sliding ring, the adjustable tuning ring having an uppersurface and a lower surface, and the upper surface of the adjustabletuning ring contacting the lower surface of the sliding ring; and anactuating mechanism interfaced with the lower surface of the adjustabletuning ring, the actuating mechanism configured to actuate theadjustable tuning ring such that the gap between the first ringcomponent and the second ring component is varied.

3. The processing chamber of paragraph 2, wherein the substrate supportmember comprises: a base; a cooling plate supported by the base; and anelectrostatic chuck positioned on an upper surface of the cooling plate.

4. The process kit or the processing chamber according to any one ofparagraphs 1-3, wherein the sliding ring comprises a matrix and acoating.

5. The process kit or the processing chamber according to any one ofparagraphs 1-4, wherein the matrix comprises aluminum or an aluminumalloy

6. The process kit or the processing chamber according to any one ofparagraphs 1-5, wherein the coating comprises a material selected fromthe group consisting of yttrium oxide, hafnium oxide, silicon carbide,and any combination thereof.

7. The process kit or the processing chamber according to any one ofparagraphs 1-6, wherein the matrix comprises an electrically conductivematerial and the coating comprises an electrically insulating material.

8. The process kit or the processing chamber according to any one ofparagraphs 1-7, wherein the sliding ring comprises an upper segmentdisposed on a lower segment, the upper segment comprises siliconcarbide, and the lower segment comprises aluminum or an aluminum alloy.

9. The process kit or the processing chamber according to any one ofparagraphs 1-8, further comprising an electrically insulating supportring disposed between the adjustable tuning ring and the actuatingmechanism.

10. The process kit or the processing chamber of paragraph 9, whereinthe insulating support ring comprises a polytetrafluoroethylenematerial.

11. The process kit or the processing chamber of paragraph 9, whereinthe actuating mechanism comprises a lift pin, and wherein the insulatingsupport ring is between and contacting the adjustable tuning ring andthe lift pin.

12. The process kit or the processing chamber of paragraph 8, wherein analignment coupling on the lower surface of the adjustable tuning ringand an alignment coupling on an upper surface of the insulating supportring mate to form a mating profile therebetween.

13. The process kit or the processing chamber of paragraph 12, whereinthe insulating support ring mate comprises three or more slots extendingfrom a lower surface of the insulating support ring mate towards anupper surface of the insulating support ring mate, and wherein each slotcontains a lift pin disposed therein.

14. The process kit or the processing chamber according to any one ofparagraphs 1-13, wherein the adjustable tuning ring comprises anelectrically conductive material.

15. The process kit or the processing chamber of paragraph 14, whereinthe electrically conductive material comprises aluminum or an aluminumalloy.

16. The process kit or the processing chamber according to any one ofparagraphs 1-15, wherein the second ring component comprises siliconcarbide.

17. The process kit or the processing chamber according to any one ofparagraphs 1-16, wherein the first ring component comprises a steppedsurface formed therein, and wherein the stepped surface of the firstring component interfaces with a portion of the lower surface of thesecond ring component.

18. The process kit or the processing chamber according to any one ofparagraphs 1-17, wherein the adjustable tuning ring comprises three ormore slots extending from the lower surface of the adjustable tuningring towards the upper surface of the adjustable tuning ring, andwherein each slot contains a lift pin disposed therein.

19. The process kit or the processing chamber of paragraph 18, whereinthe adjustable tuning ring comprises three slots disposed around theadjustable tuning ring separated from each other by an angle of about110 degrees to about 130 degrees, as measured from the center of theadjustable tuning ring.

20. The process kit or the processing chamber of paragraph 18, whereinthe adjustable tuning ring comprises four slots disposed around theadjustable tuning ring separated from each other by an angle of about 80degrees to about 100 degrees, as measured from the center of theadjustable tuning ring.

21. The process kit or the processing chamber according to any one ofparagraphs 1-20, wherein the actuating mechanism comprises two or morelift pins, each of the lift pins having a first end and a second end,the first end of the lift pin contacting the lower surface of theadjustable tuning ring, and the second end of the lift pin incommunication with a lift mechanism.

22. The process kit of paragraph 21, wherein the actuating mechanismcomprises four lift pins, each of the first ends of the lift pinscontacting a point on the lower surface of the adjustable tuning ring,the points on the lower surface are separated from each other by anangle of about 80 degrees to about 100 degrees, as measured from thecenter of the adjustable tuning ring.

23. A method for processing a substrate, wherein the method is performedwith the process kit or the processing chamber according to any one ofparagraphs 1-22.

24. A method for processing a substrate, comprising: positioning thesubstrate on the substrate support member disposed in the process kit orthe processing chamber according to any one of paragraphs 1-22; forminga plasma above the substrate; and adjusting a height of the second ringcomponent of the edge ring by actuating the adjustable tuning ringinterfaced with the component to change a direction of ions at an edgeof the substrate.

While the foregoing is directed to specific embodiments, other andfurther embodiments may be devised without departing from the basicscope thereof, and the scope thereof is determined by the claims thatfollow.

Certain embodiments and features have been described using a set ofnumerical upper limits and a set of numerical lower limits. It should beappreciated that ranges including the combination of any two values,e.g., the combination of any lower value with any upper value, thecombination of any two lower values, and/or the combination of any twoupper values are contemplated unless otherwise indicated. Certain lowerlimits, upper limits and ranges appear in one or more claims below.

1. A process kit for a substrate processing chamber, comprising: an edgering having a first ring component and a second ring component, thefirst ring component interfaced with the second ring component such thatthe second ring component is movable relative to the first ringcomponent forming a gap therebetween, and the second ring componenthaving an upper surface and a lower surface; a sliding ring positionedbeneath the edge ring, the siding ring having an upper surface and alower surface, and the upper surface of the sliding ring contacting thelower surface of the second ring component; an adjustable tuning ringpositioned beneath the sliding ring, the adjustable tuning ring havingan upper surface and a lower surface, and the upper surface of theadjustable tuning ring contacting the lower surface of the sliding ring;and an actuating mechanism interfaced with the lower surface of theadjustable tuning ring, the actuating mechanism configured to actuatethe adjustable tuning ring such that the gap between the first ringcomponent and the second ring component is varied.
 2. The process kit ofclaim 1, wherein the sliding ring comprises a matrix and a coating. 3.The process kit of claim 2, wherein the matrix comprises aluminum or analuminum alloy and the coating comprises a material selected from thegroup consisting of yttrium oxide, hafnium oxide, silicon carbide, andany combination thereof.
 4. The process kit of claim 2, wherein thematrix comprises an electrically conductive material and the coatingcomprises an electrically insulating material.
 5. The process kit ofclaim 1, wherein the sliding ring comprises an upper segment disposed ona lower segment, the upper segment comprises silicon carbide, and thelower segment comprises aluminum or an aluminum alloy.
 6. The processkit of claim 1, further comprising an electrically insulating supportring disposed between the adjustable tuning ring and the actuatingmechanism.
 7. The process kit of claim 6, wherein the insulating supportring comprises a polytetrafluoroethylene material.
 8. The process kit ofclaim 6, wherein the actuating mechanism comprises a lift pin, andwherein the insulating support ring is between and contacting theadjustable tuning ring and the lift pin.
 9. The process kit of claim 8,wherein an alignment coupling on the lower surface of the adjustabletuning ring and an alignment coupling on an upper surface of theinsulating support ring mate to form a mating profile therebetween. 10.The process kit of claim 6, wherein the insulating support ring matecomprises three or more slots extending from a lower surface of theinsulating support ring mate towards an upper surface of the insulatingsupport ring mate, and wherein each slot contains a lift pin disposedtherein.
 11. The process kit of claim 1, wherein the first ringcomponent comprises a stepped surface formed therein, and wherein thestepped surface of the first ring component interfaces with a portion ofthe lower surface of the second ring component.
 12. The process kit ofclaim 1, wherein the adjustable tuning ring comprises three or moreslots extending from the lower surface of the adjustable tuning ringtowards the upper surface of the adjustable tuning ring, and whereineach slot contains a lift pin disposed therein.
 13. The process kit ofclaim 12, wherein the adjustable tuning ring comprises three slotsdisposed around the adjustable tuning ring separated from each other byan angle of about 110 degrees to about 130 degrees, as measured from thecenter of the adjustable tuning ring.
 14. The process kit of claim 13,wherein the adjustable tuning ring comprises four slots disposed aroundthe adjustable tuning ring separated from each other by an angle ofabout 80 degrees to about 100 degrees, as measured from the center ofthe adjustable tuning ring.
 15. The process kit of claim 1, wherein theactuating mechanism comprises two or more lift pins, each of the liftpins having a first end and a second end, the first end of the lift pincontacting the lower surface of the adjustable tuning ring, and thesecond end of the lift pin in communication with a lift mechanism. 16.The process kit of claim 15, wherein the actuating mechanism comprisesfour lift pins, each of the first ends of the lift pins contacting apoint on the lower surface of the adjustable tuning ring, the points onthe lower surface are separated from each other by an angle of about 80degrees to about 100 degrees, as measured from the center of theadjustable tuning ring.
 17. A processing chamber, comprising: asubstrate support member configured to support a substrate; and aprocess kit supported by the substrate support member, the process kitcomprising: an edge ring having a first ring component and a second ringcomponent, the first ring component interfaced with the second ringcomponent such that the second ring component is movable relative to thefirst ring component forming a gap therebetween, and the second ringcomponent having an upper surface and a lower surface; a sliding ringpositioned beneath the edge ring, the siding ring having an uppersurface and a lower surface, and the upper surface of the sliding ringcontacting the lower surface of the second ring component; an adjustabletuning ring positioned beneath the sliding ring, the adjustable tuningring having an upper surface and a lower surface, and the upper surfaceof the adjustable tuning ring contacting the lower surface of thesliding ring; and an actuating mechanism interfaced with the lowersurface of the adjustable tuning ring, the actuating mechanismconfigured to actuate the adjustable tuning ring such that the gapbetween the first ring component and the second ring component isvaried.
 18. The processing chamber of claim 17, wherein the sliding ringcomprises a matrix and a coating, the matrix comprises an electricallyconductive material, and the coating comprises an electricallyinsulating material.
 19. The processing chamber of claim 17, wherein thesubstrate support member comprises: a base; a cooling plate supported bythe base; and an electrostatic chuck positioned on an upper surface ofthe cooling plate.
 20. A method for processing a substrate, comprising:positioning the substrate on the substrate support member disposed inthe processing chamber of claim 17; forming a plasma above thesubstrate; and adjusting a height of the second ring component of theedge ring by actuating the adjustable tuning ring interfaced with thecomponent to change a direction of ions at an edge of the substrate.